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| 2SA1020 PNP Transistor Elektronische Bauelemente RoHS Compliant Product Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free T O-92 MOD 6.00.2 4.90.2 FEATURE Power Amplifier Applications 1.00.1 Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature Value -50 -50 -5 -2 900 -55~+150 Units V V V A mW O 140.2 0.50 +0.1 -0.1 (1.50 Typ.) 1.9 +0.1 -0.1 123 3.00.1 0.45 +0.1 -0.1 MAXIMUM RATINGS Ta=25 C unless otherwise noted o IC PD TJ,Tstg 2.0 +0.3 -0.2 8.60.2 C 1: Emitter 2: Collector 3: Base Unit: mm ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance o Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 fT Cob Min -50 -50 -5 70 - Typ. 100 40 Max - Unit V V V uA uA V V Test Conditions IC=-100A,IE=0 IC=-1mA,IB=0 IE=-100A,IC=0 VCB=-50V,IE=0 VBE=-5 V,IC=0 IC=- 1A,IB=-50mA IC=- 1 A,IB=- 50mA VCE=-2 V, IC=- 500A VCE=-2 V, IC=- 500mA VCB=-10 V , f=1MHz -1 -1 -0.5 -1.2 240 - MH z pF Classification of hFE1 Rank Range O 70~140 Y 120~240 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SA1020 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors Typical Characteristics 2SA1020 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SA1020 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3 |
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